Data Sheet No. PD60147J

IR2110/IR2113
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels Separate logic supply range from 5 to 20V Logic and power ground ±5V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs

Product Summary
VOFFSET (IR2110) (IR2113) IO+/VOUT ton/off (typ.) Delay Matching 500V max. 600V max. 2A / 2A 10 - 20V 120 & 94 ns 10 ns

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Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

Packages

14 Lead PDIP IR2110/IR2113

14 Lead PDIP w/o Lead 4 IR2110-1/IR2113-1

16 Lead PDIP w/o leads 4 & 5 IR2110-2/IR2113-2

16 Lead SOIC IR2110S/IR2113S

Typical Connection up to 500V or 600V

HO V DD HIN SD LIN V SS VCC V DD HIN SD LIN V SS V CC COM LO VB VS TO LOAD

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IR2110/IR2113
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28