High Voltage

CMOS .   1.3.1.Tension d' alimentation ( Supply voltage ) Le circuit contenant les portes doit être alimenté la plupart du temps sur ces broches 14 ,16 pour VCC ou VDD, alimentation + et sur la broche 7 , 8 pour GND ou VSS , alimentation - . La technologie TTL ( tout à transistors ) demande une alimentation du circuit en + 5 Volts +/- 5 %La technologie CMOS (transistors MOS ) peut fonctionner de +3 à +15 V 1.3.2.Tension d' entrée ( input voltage ) En logique ( positive ) , la valeur "1" est attribuée

Campus, West of Scotland Science Park, Glasgow G20 0SP Scotland, Email: craig.clark@clyde-space.com ABSTRACT For the last few decades, the focus of power subsystem development and advancement has revolved around the needs and requirements of large, high power missions, mainly for telecommunications applications. Whereas the challenges to increase efficiency and to reduce mass and volume in these applications are valid, the needs of the small satellite mission have often been over shadowed. The growing

................................................07 Measurement of Resonant Frequency and Resonant Impedance ...07 Measurement of Sound Pressure Level (S.P.L.) ...........................08 4 Environmental Characteristics YYYYYYYYYYYYYYY09 1. Voltage and Temperature Characteristics .................................09 2. Environmental Tests ....................................................................09 Introduction Murata is active in R&D of new electronic components, seeking infinite

Power PhotoMOS (AQZ10 , 20 ) High capacity PhotoMOS Relay. (Load current Max. 4A) DC load type is available. FEATURES 21 .827 3.5 .138 12.5 .492 Power PhotoMOS (AQZ10 , 20 ) TYPICAL APPLICATIONS • High-speed inspection machines • IC checker • NC machine, Robots • Office machines • Telecommunication • Automotive mm inch 1 - + 2 3 4 AC/DC type 1 - + 2 3 - + 4 1. High capacity PhotoMOS Relay in a compact and slim 4-pin SIL 2. Extremely low ON

.............. 7-12 Terminal assignments..................................................................................... 7-12 Digital inputs/outputs ...................................................................................... 7-16 Voltage Sensing Board (VSB) ........................................................................ 7-18 BASIC FUNCTION CHECK ............................................................................. 8-1 EXPLANATION OF TERMINOLOGY AND FUNCTIONALITY OF

III.2) Logic Levels:   A range of voltages near VDD corresponds to logic ‘1’ A range of voltages near VSS corresponds to logic ‘0’ The range in between is X, the unknown value, signals must swing through the X region while the chip is operating, no node should ever achieve X as its final value. VOL: voltage produced for logic ‘0’ VOH: voltage produced for logic ‘1’ VIL: the input voltage which will be interpreted as a logic ‘0’ VIH: he input voltage which will be interpreted as a logic ‘1’

A |/Y | +===*===+ | 0 | Z | | 1 | 0 | +---*---+ _ /Y = A 7406 Hex open-collector high-voltage inverters. Maximum output voltage is 30V. 1A /1Y 2A /2Y 3A /3Y GND +---+--+---+ |1 +--+ 14| |2 13| |3 12| |4 7406 11| |5 10| |6 9| |7 8| +----------+ VCC 6A /6Y 5A /5Y 4A /4Y +---*---+ | A |/Y | +===*===+ | 0 | Z | | 1 | 0 | +---*---+ _ /Y = A 7407 Hex open-collector high-voltage buffers. Maximum output voltage is 30V. +---+--+---+ 1A |1 +--+ 14| VCC +---*---+ | A | Y | Y = A 1Y 2A 2Y 3A 3Y

passent de passant à bloquant, ou inversement. Ce changement se fait en environ 120 picosecondes, et il se produit une fois chaque 10 nanosecondes. La base du capteur CMOS est l’APS (Active Pixel Sensor). En effet, sur un CMOS, la conversion en voltage des électrons stockés dans les puits de potentiel est faite directement au niveau de chaque pixel. On verra dans la suite de ce rapport qu’au niveau de chaque pixel, on trouve déjà un nombre important de composants électroniques. Chaque cellule du

Inverters PWI Series INDOOR Inverters PWI Series OUTDOOR Accessories WIRELESS DISPLAY DATALOGGER SOFTWARE General specification Technical specifications Parameters Output voltage Frequency Maximum operating temperature Minimum operating temperature Nominal operating temperature Relative humidity Enclosure rating Power factor Total harmonic distortion Safety class Galvanic isolation class DC surge protection Protection against islanding Islanding detection ENS Reverse polarity

ECT 158 updated September 2005 Lexicon Abbreviations BC MLVS Symbols A Breaking capacity. Main low voltage switchboard. Cross-sectional area of conductors. Angle between the initiation of the fault and zero voltage. Voltage factor. Power factor (in the absence of harmonics). Instantaneous electromotive force. Electromotive force (rms value). Phase angle (current with respect to voltage). Instantaneous current. Alternating sinusoidal component of the instantaneous current. Aperiodic component